SK hynix has said no plans have been finalised for memory chip production in the US following reports that it is in talks with Intel over a potential manufacturing agreement.
In a statement published on 16 September, SK hynix said it was exploring options to strengthen its global competitiveness but that no specific plans or arrangements had been confirmed.
The clarification follows a Reuters report that SK hynix was in discussions with Intel about manufacturing memory chips in the US for the first time.
One scenario reported by Reuters involved SK hynix potentially leasing part of Intel’s long-planned semiconductor manufacturing facility in Ohio.
A second possibility was reported to involve a joint venture between SK hynix, Intel and major cloud companies.
SK hynix said neither scenario had been decided upon and that nothing had been finalised regarding cooperation with the companies named in the report or memory chip production in the US.
Existing US semiconductor facility
SK hynix is already expanding its US semiconductor footprint through an advanced packaging facility in West Lafayette, Indiana.
The company broke ground on the facility in August as part of an investment of more than $4bn.
The site will include high-bandwidth memory (HBM) production lines and an advanced packaging R&D testbed.
SK hynix plans to open the facility’s cleanroom in 2028, with mass production of next-generation HBM targeted for 2029.
Wafers manufactured in South Korea will be shipped to Indiana for advanced packaging and testing before being supplied to US customers.
The Indiana project is separate from the potential Intel arrangement reported by Reuters, which could involve memory chip manufacturing rather than advanced packaging.
South Korean cleanroom expansion
Meanwhile, SK hynix continues to expand semiconductor manufacturing capacity in South Korea.
At the Yongin Semiconductor Cluster, the company is developing a four-fab complex focused on advanced DRAM and AI memory production.
Construction of the first fab has moved into cleanroom fit-out, with a Central Chemical Supply System being installed to provide high-purity process chemicals to manufacturing equipment.
The first Yongin cleanroom is scheduled to open in February 2027.
SK hynix has also approved a $38.3bn investment covering a second DRAM fab at Yongin and a new NAND flash facility at its existing manufacturing site.
The Yongin Y2 fab is scheduled to begin construction in July 2027, with its first cleanroom due to become operational in June 2029.
The NAND facility’s first cleanroom is scheduled to open in December 2028.
